IGBT (Bipolar Transistor)

IGBT : An Insulated Gate Bipolar Transistor (IGBT) is a Three- Terminal Power semiconductor device primarily used as on electronic switch which,as it was developed come to combine High efficiency and fast Switching.

IGBT has the advantage of High current Capability of High Curren capability of BJT and has the advantage of easy control like MOSFET Actually this power Semiconductor device emerged to overcome the drawback of transistor and mosfet.
The IGBT is a Semiconductor device with four alternating layers (P-N-P-N) that are control by a metal oxide semiconductor (MOS) gate structure without regenerative action.

IGBT Comparison Table 

The IGBT combines the simple gate drive characteristic of MOSFET with the high current low saturation voltage Capability of bipolor Transistor. the IGBT combines an isolated - gate FET For the control input and a bipolar power transistor as a switch in a single device. the IGBT is used in medium to high power application like switched mode power supplies traction motor control and induction heating large IGBT modules typically consist of many devices in parallel and can have very high current handling capabilities in the order of hundreds of amperes with blocking voltages control loads of hundreds  of Kilowatts.